Desorption kinetics on an alkali metal-precovered surface: CO and K on Pt(111)WHITMAN, L. J; HO, W.The Journal of chemical physics. 1989, Vol 90, Num 11, pp 6018-6025, issn 0021-9606, 8 p.Article

Dissociation kinetics on an alkali-metal-promoted surface: NO and K on Rh(100)WHITMAN, L. J; HO, W.Surface science. 1988, Vol 204, Num 1-2, pp L725-L731, issn 0039-6028Article

The adsorption, interconversion, and dissociation of CO on Fe(111) = L'adsorption, interconversion et dissociation de CO sur Fe(111)BARTOSCH, C. E; WHITMAN, L. J; HO, W et al.The Journal of chemical physics. 1986, Vol 85, Num 2, pp 1052-1060, issn 0021-9606Article

Structure of GaSb digitally doped with MnBOISHIN, G. I; SULLIVAN, J. M; WHITMAN, L. J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 19, pp 193308.1-193308.4, issn 1098-0121Article

Chemical and electronic properties of sulfur-passivated InAs surfacesPETROVYKH, D. Y; YANG, M. J; WHITMAN, L. J et al.Surface science. 2003, Vol 523, Num 3, pp 231-240, issn 0039-6028, 10 p.Article

Patterning of narrow au nanocluster lines using V₂O₅ nanowire masks and ion-beam millingANCONA, M. G; KOOI, S. E; KRUPPA, W et al.Nano letters (Print). 2003, Vol 3, Num 2, pp 135-138, issn 1530-6984, 4 p.Article

Interfacial disorder in InAs/GaSb superlatticesTWIGG, M. E; BENNETT, B. R; THIBADO, P. M et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1998, Vol 77, Num 1, pp 7-30, issn 1364-2804Article

The structure of silicon surfaces from (001) to (111)BASKI, A. A; ERWIN, S. C; WHITMAN, L. J et al.Surface science. 1997, Vol 392, Num 1-3, pp 69-85, issn 0039-6028Article

The chemisorption of chlorosilanes and chlorine on Si(111)7 x 7WHITMAN, L. J; JOYCE, S. A; YARMOFF, J. A et al.Surface science. 1990, Vol 232, Num 3, pp 297-306, issn 0039-6028, 10 p.Article

Magnetic labeling, detection, and system integrationTAMANAHA, C. R; MULVANEY, S. P; RIFE, J. C et al.Biosensors & bioelectronics. 2008, Vol 24, Num 1, pp 1-13, issn 0956-5663, 13 p.Article

The structure of Si(112):Ga-(N x 1) reconstructionsBASKI, A. A; ERWIN, S. C; WHITMAN, L. J et al.Surface science. 1999, Vol 423, Num 2-3, pp L265-L270, issn 0039-6028Article

A RHEED and STM study of Sb-rich AlSb and GaSb (0 0 1) surface reconstructionsTHIBADO, P. M; BENNETT, B. R; SHANABROOK, B. V et al.Journal of crystal growth. 1997, Vol 175-76, pp 317-322, issn 0022-0248, 1Conference Paper

Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs : structure of the wetting layersBENNETT, B. R; SHANABROOK, B. V; THIBADO, P. M et al.Journal of crystal growth. 1997, Vol 175-76, pp 888-893, issn 0022-0248, 2Conference Paper

A stable high-index surface of silicon : Si(5 5 12)BASKI, A. A; ERWIN, S. C; WHITMAN, L. J et al.Science (Washington, D.C.). 1995, Vol 269, Num 5230, pp 1556-1560, issn 0036-8075Article

Manipulation of adsorbed atoms and creation of new structures on room-temperature surfaces with a scanning tunneling microscopeWHITMAN, L. J; STROSCIO, J. A; DRAGOSET, R. A et al.Science (Washington, D.C.). 1991, Vol 251, Num 4998, pp 1206-1210, issn 0036-8075Article

Step structure and surface morphology of hydrogen-terminated silicon: (0 0 1) to (1 1 4)LARACUENTE, A. R; WHITMAN, L. J.Surface science. 2003, Vol 545, Num 1-2, pp 70-84, issn 0039-6028, 15 p.Article

A time resolved electron energy loss spectroscopy study of CO on Pt(111): adsorption site occupations versus coverage and temperatureMIEHER, W. D; WHITMAN, L. J; HO, W et al.The Journal of chemical physics. 1989, Vol 91, Num 5, pp 3228-3239, issn 0021-9606, 12 p.Article

A new mechanism for K promotion of surface reactions: N₂ on K-precovered Fe(111)WHITMAN, L. J; BARTOSCH, C. E; HO, W et al.The Journal of chemical physics. 1986, Vol 85, Num 6, pp 3688-3698, issn 0021-9606Article

Copper silicide nanocrystals on hydrogen-terminated Si(001)LARACUENTE, A. R; BAKER, L. A; WHITMAN, L. J et al.Surface science. 2014, Vol 624, pp 52-57, issn 0039-6028, 6 p.Article

Passivation of GaSb and InAs by pH-activated thioacetamideSTINE, R; AIFER, E. H; WHITMAN, L. J et al.Applied surface science. 2009, Vol 255, Num 16, pp 7121-7125, issn 0169-4332, 5 p.Article

UHV characterization of ambient-dosed hydrogen-terminated Si(001)LARACUENTE, A. R; BAKER, L. A; WHITMAN, L. J et al.Surface science. 2008, Vol 602, Num 1, pp 3-8, issn 0039-6028, 6 p.Article

Arsenic cross-contamination in GaSb/InAs superlatticesJACKSON, E. M; BOISHIN, G. I; AIFER, E. H et al.Journal of crystal growth. 2004, Vol 270, Num 3-4, pp 301-308, issn 0022-0248, 8 p.Article

A simple pen-spotting method for arraying biomolecules on solid substratesSHEEHAN, P. E; EDELSTEIN, R. L; TAMANAHA, C. R et al.Biosensors & bioelectronics. 2003, Vol 18, Num 12, pp 1455-1459, issn 0956-5663, 5 p.Article

A micromachined magnetic-field sensor based on an electron tunneling displacement transducerDILELLA, D; WHITMAN, L. J; COLTON, R. J et al.Sensors and actuators. A, Physical. 2000, Vol 86, Num 1-2, pp 8-20, issn 0924-4247Article

The BARC biosensor applied to the detection of biological warfare agentsEDELSTEIN, R. L; TAMANAHA, C. R; SHEEHAN, P. E et al.Biosensors & bioelectronics. 2000, Vol 14, Num 10-11, pp 805-813, issn 0956-5663Article